inchange semiconductor isc product specification isc silicon npn power transistor BU4506AF description collector-emitter sustaining voltage- : v ceo(sus) = 800v (min) high switching speed applications designed for use in horizontal deflection circuits of color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7.5 v i c collector current- continuous 5 a i cm collector current-peak 8 a i b b base current- continuous 3 a i bm base current-peak 5 a p c collector power dissipation @ t c =25 45 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.8 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU4506AF electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0, l= 25mh 800 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7.5 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.75a b 3.0 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.75a b 0.98 v i ces collector cutoff current v ce = 1500v; v be = 0 v ce = 1500v; v be = 0; t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 7.5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 0.5a; v ce = 5v 10 h fe-2 dc current gain i c = 3a; v ce = 5v 4.2 7.3 switching times (16khz line deflection circuit) t stg storage time 4.6 s t f fall time i c = 3a, i b1 = 0.6a; i b2 = -1.5a 0.45 s isc website www.iscsemi.cn 2
|
